Techniques for packaging multiple device components

ABSTRACT

Techniques for fabricating multiple device components. Specifically, techniques for fabricating a stacked package comprising at least one I/C module and a multi-chip package. The multi-chip package includes a plurality of integrated circuit dices coupled to a carrier. The dice are encapsulated such that conductive elements are exposed through the encapsulant. The conductive elements are electrically coupled to the chips. The I/C module comprises an interposer having a plurality of integrated circuit dice disposed thereon. The dice of the I/C module are electrically coupled to the interposer via bondwires. The interposer is configured such that vias are aligned with the conductive elements on the multi-chip package. The multi-chip package and I/C module may be fabricated separately and subsequently coupled together to form a stacked package.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.10/386,254, filed on Mar. 11, 2003.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to electrical circuitry and,more particularly, to techniques for packaging electronic devices.

2. Description of the Related Art

This section is intended to introduce the reader to various aspects ofart that may be related to various aspects of the present invention,which are described and/or claimed below. This discussion is believed tobe helpful in providing the reader with background information tofacilitate a better understanding of the various aspects of the presentinvention. Accordingly, it should be understood that these statementsare to be read in this light, and not as admissions of prior art.

Packaging of integrated circuit devices is a key element in thetechnological development of systems implementing electrical components.Various techniques have been developed to meet the continued demands forimproving system performance and hardware capabilities, while the spacein which to provide these improved hardware capabilities continues todecrease.

Multiple integrated circuit devices may be fabricated within a singlepackage, thereby forming a multi-chip module. A single multi-chip modulemay include two or more independent integrated circuit devices, whichmay be arranged adjacent to one another or on top of one another on asubstrate, and which are encapsulated such that a single discretepackage having multiple chips or integrated circuit devices is formed.Each of the integrated circuit devices that make up the multi-chipmodule may be electrically coupled to the substrate. The substrate mayinclude one or more layers of conductive traces separated by dielectricmaterials. The traces redistribute signals from the integrated circuitdevices. The multi-chip module may be implemented in a system.Techniques for packaging electronic components and forming multi-chipmodules provide a number of fabrication challenges with respect toelectrical conductivity, heat-transfer, limited design space,manufacturability, robustness, package density, operability, and thelike.

BRIEF DESCRIPTION OF THE DRAWINGS

Advantages of the invention may become apparent upon reading thefollowing detailed description and upon reference to the drawings inwhich:

FIG. 1 illustrates a block diagram of an exemplary processor-baseddevice in accordance with the present techniques;

FIGS. 2-9 illustrate cross sectional views of exemplary techniques forfabricating a multi-chip package in accordance with embodiments of thepresent invention;

FIG. 10 illustrates an exploded view of a portion of the cross-sectionalview illustrated with reference to FIG. 9; and

FIGS. 11 and 12 illustrated cross sectional views of exemplarytechniques for fabricating a stacked package in accordance withembodiments of the present invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

One or more specific embodiments of the present invention will bedescribed below. In an effort to provide a concise description of theseembodiments, not all features of an actual implementation are describedin the specification. It should be appreciated that in the developmentof any such actual implementation, as in any engineering or designproject, numerous implementation-specific decisions must be made toachieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time consuming, but wouldnevertheless be a routine undertaking of design, fabrication, andmanufacture for those of ordinary skill having the benefit of thisdisclosure.

Turning now to the drawings, and referring initially to FIG. 1, a blockdiagram of an exemplary processor-based device, generally designated bythe reference numeral 10, is illustrated. The device 10 may be any of avariety of different types, such as a computer, pager, cellulartelephone, personal organizer, control circuit, etc. In a typicalprocessor-based device, a processor 12, such as a microprocessor,controls many of the functions of the device 10.

The device 10 may include a power supply 14. For instance, if the device10 is portable, the power supply 14 may advantageously include permanentbatteries, replaceable batteries, and/or rechargeable batteries. Thepower supply 14 may also include an A/C adapter, so that the device maybe plugged into a wall outlet, for instance. In fact, the power supply14 may also include a D/C adapter, so that the device 10 may be pluggedinto a vehicle's cigarette lighter, for instance.

Various other devices may be coupled to the processor 12, depending uponthe functions that the device 10 performs. For instance, a userinterface 16 may be coupled to the processor 12. The user interface 16may include an input device, such as buttons, switches, a keyboard, alight pin, a mouse, and/or a voice recognition system, for instance. Adisplay 18 may also be coupled to the processor 12. The display 18 mayinclude an LCD display, a CRT, LEDs, and/or an audio display.Furthermore, an RF subsystem/baseband processor 20 may also be coupledto the processor 12. The RF subsystem/baseband processor 20 may includean antenna that is coupled to an RF receiver and to an RF transmitter(not shown). A communication port 22 may also be coupled to theprocessor 12. The communication port 22 may be adapted to be coupled toa peripheral device 24, such as a modem, a printer, or a computer, forinstance, or to a network, such as a local area network or the Internet.

Because the processor 12 controls the functioning of the device 10generally under the control of software programming, memory may becoupled to the processor 12 to store and facilitate execution of thesoftware program. For instance, the processor 12 may be coupled tovolatile memory 26, which may include dynamic random access memory(DRAM), static random access memory (SRAM), Double Data Rate (DDR)memory, etc. The processor 12 may also be coupled to non-volatile memory28. The non-volatile memory 28 may include a read only memory (ROM),such as an EPROM or Flash Memory, to be used in conjunction with thevolatile memory. The size of the ROM is typically selected to be justlarge enough to store any necessary operating system, applicationprograms, and fixed data. The volatile memory, on the other hand, istypically quite large so that it can store dynamically loadedapplications. Additionally, the non-volatile memory 28 may include ahigh capacity memory such as a disk drive, tape drive memory, CD ROMdrive, DVD, read/write CD ROM drive, and/or a floppy disk drive.

As can be appreciated, one or more of the components of the device 10may be packaged together to form a portion of the device 10. Forinstance, a number of memory chips or devices may be coupled to asubstrate and encapsulated together to form a package for use in thevolatile memory 26. Alternatively, a package may be formed such that theprocessor 12 and a memory device are coupled to a substrate andencapsulated together. As can be appreciated, any number of componentcombinations may be implemented to form system-in-package (SIP) modules.As used herein, “SIPs” or “SIP modules,” generally refer to packageshaving two or more integrated circuit die, such as a memory devicesand/or processors, which are coupled to a substrate or carrier andencapsulated together to form a multi-chip package. As described below,the SIP module may include a number of conductive elements and aninterposer to facilitate the redistribution of electrical signals to andfrom the devices. By packaging a number of devices together, SIP modulesmay be implemented in a variety of system applications, as can beappreciated by those skilled in the art.

Referring specifically to FIG. 2, a cross-sectional view of a firstintegrated circuit (I/C) die 30 and a second integrated circuit (I/C)die 32 is illustrated. The first and second I/C die 30 and 32 mayinclude any combination of semiconductor devices, such asmicroprocessors, microcontrollers, random access memory (RAM) devices,read only memory (ROM), flash memory devices, application specificintegrated circuits (ASICs), integrated optic devices, integratedsensors, power devices, etc. In the present exemplary embodiment, thefirst I/C die 30 may be a memory chip, such as a dynamic random accessmemory (DRAM) chip, and the second I/C die 32 may be a microprocessorchip, for instance.

As can be appreciated, each of the first and second I/C dice 30 and 32may be attached or laminated to a substrate or carrier 34, using anadhesive material 36 for example. The adhesive material 36 may comprisean epoxy, paste, or tape, for example. The carrier 34 may comprise aceramic material, polyimade material, silicon, or glass, for example. Inone embodiment, the carrier 34 may comprise a substantially rigidmaterial. Alternatively, the carrier 34 may be comprise a flexiblematerial, such as a polyimide film. Further, the carrier 34 may comprisea conductive material, such as copper. Advantageously, a conductivecarrier 34, such as a copper carrier, may provide a heat-sink for thedice 30 and 32.

Each of the dice 30 and 32 may include a number of conductive elementsthat are electrically coupled to conductive pads (not shown) on thebackside of the dice 30 and 32. As can be appreciated, the conductivepads on each dice 30 and 32 are coupled to integrated circuits withinthe dice 30 and 32 to provide signal/voltage paths to and from the dice30 and 32. In the present exemplary embodiment, the conductive elementscomprise conductive balls, such as solder balls 38. However, dependingon the size of the dice 30 and 32 and manufacturing capabilities, theconductive elements may comprise stud bumps, metal ribbons, or otherconductive materials, as can be appreciated by those skilled in the art.In one exemplary embodiment, the solder balls 38 may be coupled to thedice 30 and 32 before lamination to the carrier 34. Alternatively, thesolder balls 38 may be coupled to the dice 30 and 32 after lamination ofthe dice 30 and 32 to the carrier 34.

After deposition of the solder balls 38 (or alternative conductiveelements), an encapsulant 40 may be disposed about the dice 30 and 32,as illustrated in FIG. 3A. The encapsulant 40 may comprise a dielectricfiller material, such as a silicone, rubber, resin, plastic, or moldingcompound, for example. As can be appreciated, the encapsulant 40 may beimplemented to seal and protect the dice 30 and 32 from externalelements. The encapsulant 40 may be disposed using a transfer moldingtechnique or a liquid dispensing technique, wherein the dice 30 and 32and solder balls 38 are completely enclosed by the encapsulant 40, asillustrated in FIG. 3A. Alternatively, a compression molding techniquemay be implemented to dispose the encapsulant 40 such that theconductive elements, here the solder balls 38, protrude from theencapsulant 40 after the encapsulant 40 is disposed and hardened, asillustrated in FIG. 3B.

As can be appreciated, if the encapsulant 40 is disposed such that thesolder balls 38 (or alternative conductive elements) are completelycovered, a planarizing or grinding technique may be implemented afterthe encapsulation process to expose portion of the conductive elements.For instance, if a transfer molding technique or a liquid encapsulatingtechnique is implemented to dispose the encapsulant 40, the surface ofthe encapsulant 40 may be ground to such a depth as to expose theunderlying solder balls 38, as illustrated with reference to FIG. 4. Ascan be appreciated, a portion of the solder balls 38 may also be removedduring the planarizing technique. Advantageously, by grinding thesurface of the encapsulant 40, a portion of the solder balls 38 isexposed, thereby providing an electrical signal path from each of thedice 30 and 32 to the outer surface of the encapsulant 40. The resultingmulti-chip package 42 having exposed conductive elements may beelectrically coupled to other packages or to a system, as describedfurther below.

Alternatively, the multi-chip package 42 may be fabricated such that thesolder balls 38 are completely omitted. In this exemplary embodiment,the conductive pads on the backside of the dice 30 and 32 comprise theconductive elements. Accordingly, the encapsulant 40 may be disposedsuch that the conductive pads on the backsides of the dice 30 and 32 areleft exposed. Alternatively, the encapsulant 40 may be omitted entirely.

After fabricating the multi-chip package 42 having exposed conductiveelements, an interposer 44 may be coupled to the multi-chip package 42,as illustrated in FIG. 5. The interposer 44 may comprise one or moreredistribution layers (RDLs) to redistribute the electrical contacts(here solder balls 38) for electrical coupling to a printed circuitboard, for instance. Because the exemplary multi-chip package 42 isplanarized, as described with reference to FIG. 4, the surface of theinterposer 44 may be laminated directly to the top surface of theencapsulant 40.

Generally, the interposer 44 includes one or more conductive layerswhich are patterned to form signal paths. Dielectric layers are disposedon the outer surfaces of the interposer 44, as well as between theconductive layers. Vias are generally formed through the interposer 44,and a conductive material is disposed in the vias to provide a verticalpath for electrical signals, as can be appreciated. The presentexemplary interposer 44 includes an adhesive layer 46. The adhesivelayer 46 may comprise a non-conductive tape, paste, or epoxy forexample. Alternatively, if a compression molding technique isimplemented to encapsulate the die 30 and 32, such that the encapsulantconforms about the solder balls 38 and provides an exposed portion, asillustrated in FIG. 3B, the adhesive layer 46 may be omitted.

The present exemplary interposer 44 further may include a first soldermask layer 48, a polyimade layer 50, a conductive trace layer 52, and asecond solder mask layer 54. However, as can be appreciated, theinterposer 44 may include a number of acceptable conductive anddielectric materials to facilitate the redistribution of signal pathsfrom the dice 30 and 32. The trace layer 52 may comprise a layer ofmetal, such as gold or aluminum, which is disposed and etched to formconductive traces. The conductive traces are implemented to carryelectrical signals to and from desired locations on the dice 30 and 32.As can be appreciated, the interposer 44 may include more than one tracelayer 52 separated from adjacent trace layers by dielectric layers. Thetrace layer 52 may include a number of conductive pads 56 and 58 thatare exposed through openings in the second solder mask layer 54. Theconductive pads 56 and 58 may be implemented to electrically couple thedie 30 and 32 to discrete devices, other multi-chip packages, or asystem board, as described further below.

Further, the interposer 44 comprises a plurality of vias 60 which areconfigured to provide openings to expose the underlying conductiveelements, here the planarized surface of the solder balls 38. As usedherein, “adapted to,” “configured to,” and the like refer to elementsthat are arranged or manufactured to form a specified structure or toachieve a specified result. As can be appreciated, the vias 60 arealigned with the conductive elements (planarized solder balls 38) duringlamination of the interposer 44 to the multi-chip package 42. Further,the first layer of the interposer 44, here the adhesive layer 46, may beconfigured to provide openings at the bottom of each of the vias 60,such that the openings in the adhesive layer 46 correlate approximatelyto the size of the exposed conductive elements (planarized solder balls38). As can be appreciated, the walls of the vias 60 may be coated withthe same material that is implemented in the conductive trace layer 52to further increase the conductivity through the vias 60.

FIG. 6 illustrates the interposer 44 coupled to the multi-chip package42, after deposition of a conductive material 62 into the vias 60. Theconductive material 62 may comprise solder, for example. As can beappreciated, the conductive material 62 may be disposed into the vias 60such that the conductive material 62 contacts the exposed portions ofthe underlying conductive elements (planarized solder balls 38). Theconductive material 62 electrically couples the dice 30 and 32 to thetrace layer 52, including the conductive pads 56 and 58. A conductivematerial 64 may also be disposed on each of the conductive pads 56 and58. The conductive material 64 may comprise the same material as theconductive material 62. In the present exemplary embodiment, theconductive material 64 comprises a solder paste. In one exemplaryembodiment, the conductive material 64 that is disposed on theconductive pads 56 may be different from the conductive material that isdisposed on the conductive pads 58.

Referring to FIG. 7, the conductive material 64 disposed on theconductive pads 58 may be implemented to electrically couple a discretedevice 66 to the backside of the interposer 44. The discrete device 66may comprise a memory device, such as an erasable programmable read onlymemory (EPROM) device, for example. Advantageously, by implementing thebackside of the interposer 44 for components, such as the discretedevice 66, space savings may be realized. The discrete device 66comprises an integrated circuit die which may be encapsulated in amolding compound, for example. As can be appreciated, the multi-chipmodule may or may not include one or more discrete devices, such as thediscrete device 66, coupled to the side of the interposer 44 oppositethe multi-chip package.

After attaching any additional devices, such as the discrete device 66,to the backside of the interposer 44, the conductive material 64disposed on the conductive pads 56 may be reflowed during a heatingprocess to form conductive balls 68, as illustrated in FIG. 8. As can beappreciated, the conductive balls 68 (here solder balls) may beimplemented to electrically and physically couple the module to anothermodule or a system board. Advantageously, the conductive balls 68 have adiameter greater than the thickness of the discrete device 66.

Finally, the multi-chip package 42 may be singulated to form theintegrated circuit module 70, as illustrated in FIG. 9. Alternatively,the multi-chip package 42 may be singulated before lamination to theinterposer 44. In the present exemplary embodiment, the I/C modulecomprises a SIP having a memory die (I/C die 30), a processor (I/C die32), and an EPROM (discrete device 66). FIG. 10 illustrates an explodedview of the cross-section of the I/C module 70 illustrated in FIG. 9 andindicated by dashed lines 72. As can be appreciated, by prefabricatingthe interposer 44 and the multi-chip package 42 and then laminating themtogether, fabrication of the I/C module 70 may be simplified.

The techniques described above may be also be implemented in conjunctionwith stacking techniques to advantageously improve electricalperformance capabilities without increasing the space occupied on asystem board. FIG. 11 illustrates an exemplary embodiment of a stackedpackage 74, fabricated in accordance with the present techniques. FIG.12 illustrates an exploded view of the cross-section of the stackedpackage 74 illustrated in FIG. 11 and indicated by dashed lines 80.Accordingly the following description should be reviewed in conjunctionwith FIGS. 11 and 12. For simplicity, like reference numerals have beenused to designate like elements, previously described with reference toFIGS. 2-10.

The package 74 includes an IC module 70A comprising an interposer 44Ahaving dice 30A and 32A disposed thereon. The exemplary stacked package74 also includes a multi-chip package 42B. As previously described, themulti-chip package 42B may include a plurality of dice, such as the dice30B and 32B. The dice 30A, 32A, 30B and 32B may include any combinationof semiconductor devices, such as microprocessors, microcontrollers,random access memory (RAM) devices, read only memory (ROM), flash memorydevices, application specific integrated circuits (ASICs), integratedoptic devices, integrated sensors, power devices, etc.

The multi-chip package 42B may be fabricated as described above withreference to FIGS. 2-4. In the present exemplary embodiment, themulti-chip package 42B may be fabricated using a compression moldingtechnique, as described with reference to FIG. 3B. Accordingly, theconductive elements, here the solder balls 38, protrude from theencapsulant 40, as previously described. Alternate embodiments of themulti-chip package 42B may also be implemented, as previously described.

Advantageously, the I/C module 70A may be fabricated separately from themulti-chip package 42B and subsequently attached to the multi-chippackage 42B. The I/C module 70A comprises an interposer 44A. Aspreviously described, the interposer 44A includes one or more conductivelayers which are patterned to form conductive traces to provideelectrical signal paths. Dielectric layers are disposed on the outersurfaces of the interposer 44A, as well as between the conductivelayers. Vias are generally formed through the interposer 44A and aconductive material is disposed in the vias to provide a vertical pathfor electrical signals.

More specifically, the present exemplary interposer 44A includes a firstsolder mask layer 54, a polyimade layer 50, a conductive trace layer 52and a second solder mask layer 48. However, as can be appreciated, theinterposer 44A may include a number of acceptable conductive anddielectric materials to facilitate the redistribution of signals fromthe dice 30A and 32A which are attached to the interposer via anadhesive material 36. The adhesive material may comprise an epoxy,paste, or tape, for example. The conductive layer 52 may comprise alayer of metal, such as gold or aluminum, which is disposed and etchedto form conductive traces. The conductive traces are implemented tocarry electrical signals to and from desired locations on the dice 30Aand 32A. Accordingly, to carry signals to and from the dice 30A and 32A,the dice 30A and 32A are electrically coupled to the trace layer 52 viabond wires 76. As can be appreciated, bond pads (not shown) are disposedon the top surface of each of the dice 30A and 32A. The bond wires 76are coupled from the respective bond pads to a corresponding pad ortrace on the conductive layer 52. As previously described, vias filledwith a conductive material (e.g., solder or gold) 62 may be implementedto carry signals vertically through the interposer 44A.

After encapsulation, the I/C module 70A may be coupled to the multi-chippackage 42B. The vias filled with conductive material 62 of theinterposer 44A are configured to align with the conductive elements,here solder balls 38B, of the multi-chip module 42B. Accordingly, thedice 30B and 32B may be electrically coupled to the dice 30A and 32A viathe signal paths created by the solder balls 38B of the multi-chippackage 42B, the vias filled with conductive material 62, the traces ofthe conductive layer 52 and the bond wires 76. Further, solder balls 38Bon the topside of the dice 30A and 32A may be implemented toelectrically couple the I/C module 70A to a system board 78.Advantageously, the electrically conductive paths provided in thepresent stacked configuration provide signal paths to and from each ofthe dice 30A and 32A, as well as the dice 30B and 32B. As can beappreciated, additional I/C modules 70A may included in the stackedpackage 74. For instance, a second I/C module (not shown) may be coupledbetween the I/C module 70A and the system board 78. As can beappreciated, by pre-fabricating each of the I/C modules 70A and themulti-chip module 42B and then laminating them together, fabrication ofthe stacked package 74 may be simplified.

As can be appreciated, because the present exemplary multi-chip package42B is compression molded, and therefore the conductive elements, heresolder balls 38B, protrude beyond the plane of the encapsulant 40, anadhesive layer may be omitted between the multi-chip package 42B and theI/C module 70A. The present exemplary interposer 44A does not include anadhesive layer 46 (previously described with reference to FIG. 5).Accordingly, in the present exemplary embodiment, the solder balls 38Bof the multi-chip package 42B provide for electrical and mechanicalcoupling to the I/C module 70A. Alternatively, an adhesive layer may beincluded between the interposer 44A and the multi-chip package 42B toimprove adhesion. As can be appreciated, an adhesive layer may also beimplemented if alternate molding techniques (previously described withreference to FIG. 3A) are implemented.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the followingappended claims.

1. A method of fabricating a stacked package comprising: fabricating aninterposer, the interposer having conductive vias therethrough andcomprising a trace layer; attaching the first side of the firstplurality of integrated circuit dice to a first side of the interposer;coupling a plurality of bond wires from the second side of the firstplurality of integrated circuit dice to the trace layer to electricallycouple the first plurality of integrated circuit dice to the interposer;disposing a first plurality of conductive elements on the second side ofthe first plurality of integrated circuit dice; encapsulating the firstplurality of integrated circuit dice with a first encapsulant such thatthe first plurality of conductive elements are exposed through openingsin the first encapsulant; fabricating a multi-chip package comprising asecond plurality of dice, wherein each of the second plurality of diceis coupled to a carrier and wherein a second encapsulant is disposedabout the second plurality of dice, wherein the second plurality of dicecomprises a second plurality of conductive elements electrically coupledto the respective second plurality of dice and wherein the secondplurality of conductive elements are exposed through openings in thesecond encapsulant; and coupling the second plurality of conductiveelements of the multi-chip package to the conductive vias of theinterposer.
 2. The method of fabricating a stacked package, as set forthin claim 1, wherein fabricating the interposer comprises: disposing afirst solder mask layer; disposing a polyimade layer on the first soldermask layer; disposing a conductive layer on the polyimade layer; forminga plurality of traces in the conductive layer to form the trace layer;disposing a second solder mask layer on the conductive layer; formingthe plurality of vias through each of the second solder mask layer, theconductive layer, the polyimade layer and the first solder mask layer;and disposing a conductive material into the plurality of vias to formthe plurality of conductive vias.
 3. The method of fabricating a stackedpackage, as set forth in claim 1, wherein attaching the first pluralityof dice to the interposer comprises laminating each of first pluralityof dice onto the interposer, wherein at least one of the first pluralityof dice comprises a memory die.
 4. The method of fabricating a stackedpackage, as set forth in claim 3, wherein attaching the first pluralityof dice to the interposer comprises laminating each of first pluralityof dice onto the interposer, wherein at least another of the firstplurality of dice comprises a processor die.
 5. The method offabricating a stacked package, as set forth in claim 1, whereindisposing a first plurality of conductive elements on the second side ofthe first plurality of integrated circuit dice comprises disposing aplurality of solder balls.
 6. The method of fabricating a stackedpackage, as set forth in claim 1, wherein encapsulating the firstplurality of integrated circuit dice comprises: laminating the firstplurality of dice to the interposer; and disposing the first encapsulantabout the first plurality of dice such that the first conductiveelements are exposed through the openings in the first encapsulant. 7.The method of fabricating a stacked package, as set forth in claim 1,wherein encapsulating the first plurality of integrated circuit dicecomprises: laminating the first plurality of dice to the interposer;disposing the first encapsulant about the first plurality of dice suchthat the first conductive elements are completely encapsulated; andgrinding the first encapsulant such that the first conductive elementsare exposed through the openings in the first encapsulant.
 8. The methodof fabricating a stacked package, as set forth in claim 1, whereinfabricating the multi-chip package comprises laminating each of thesecond plurality of dice onto the carrier, wherein at least one of thesecond plurality of dice comprises a memory die.
 9. The method offabricating a stacked package, as set forth in claim 8, whereinfabricating the multi-chip package comprises laminating each of thesecond plurality of dice onto the carrier, wherein at least another ofthe second plurality of dice comprises a processor die.